INFLUENCE OF IMPULSE PHOTON ANNEALING ON STRUCTURE AND PHASE COMPOSITION OF THIN-FILMED SYSTEMS ON BASIS OF SILICON AND TRANSITION METALS
Abstract
Methods of transmission electronic microscopy, electron diffraction, energy dispersive X-ray microanalysis have been used for investigations of element composition, regularities in structural and phase transmissions occurring in thin-filmed systems Si–Fe–Si and TiN–Ti–Si while using impulse photon annealing in terms of radiation energy density. Optimum parameters of impulse photon annealing for formation of β-FeSi2 and C54-TiSi2 thin films on silicon have been determined in the paper.
About the Authors
M. I. Markevich
Belarusian National Technical University
Belarus
A. M. Chaplanov
Physical-Engineering Institute of the NAS of Belarus
Belarus
E. N. Scherbakova
Physical-Engineering Institute of the NAS of Belarus
Belarus
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For citations:
Markevich M.I.,
Chaplanov A.M.,
Scherbakova E.N.
INFLUENCE OF IMPULSE PHOTON ANNEALING ON STRUCTURE AND PHASE COMPOSITION OF THIN-FILMED SYSTEMS ON BASIS OF SILICON AND TRANSITION METALS. Science & Technique. 2013;(2):63-66.
(In Russ.)
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