For citations:
Solodukha V.A., Belous A.I., Chyhir G.G. DEPTH MEASUREMENT OF DISRUPTED LAYER ON SILICON WAFER SURFACE USING AUGER SPECTROSCOPY METHOD. Science & Technique. 2016;15(4):329-334. (In Russ.) https://doi.org/10.21122/2227-1031-2016-15-4-329-334