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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">sat</journal-id><journal-title-group><journal-title xml:lang="ru">НАУКА и ТЕХНИКА</journal-title><trans-title-group xml:lang="en"><trans-title>Science &amp; Technique</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">2227-1031</issn><issn pub-type="epub">2414-0392</issn><publisher><publisher-name>Belarusian National Technical University</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.21122/2227-1031-2026-25-3-246-252</article-id><article-id custom-type="elpub" pub-id-type="custom">sat-2962</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>ФИЗИКО-МАТЕМАТИЧЕСКИЕ НАУКИ</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>PHYSICS AND MATHEMATICS SCIENCES</subject></subj-group></article-categories><title-group><article-title>Влияние условий получения керамических материалов системы ВаO – Sm2 – O3 – 4TiO4 на формирование сверхвысоких частотных свойств</article-title><trans-title-group xml:lang="en"><trans-title>The Influence of Production Conditions of ВаO – Sm2 – O3 – 4TiO4 Ceramic Materials on the Formation of Microwave Properties</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Летко</surname><given-names>А. К.</given-names></name><name name-style="western" xml:lang="en"><surname>Letko</surname><given-names>A. K.</given-names></name></name-alternatives><bio xml:lang="ru"><p>г. Минск</p></bio><bio xml:lang="en"><p>Minsk</p></bio><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Савчук</surname><given-names>Г. К.</given-names></name><name name-style="western" xml:lang="en"><surname>Sauchuk</surname><given-names>G. K.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Кандидат физико-математических наук, доцент.г. Минск </p></bio><bio xml:lang="en"><p>Minsk</p></bio><xref ref-type="aff" rid="aff-2"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Юркевич</surname><given-names>Н. П.</given-names></name><name name-style="western" xml:lang="en"><surname>Yurkevich</surname><given-names>N. P.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Адрес для переписки:Юркевич Наталья Петровна – кандидат физико-математических наук, доцент.Белорусский национальный технический университет просп. Независимости, 65,220013, г. Минск, Республика Беларусь Тел.: +375 29 117-99-79</p><p>jurkevich@bntu.by</p></bio><bio xml:lang="en"><p>Yurkevich Natalia P.Belarusian National Technical University 65, Nezavisimosty Ave.,220013, Minsk, Republic of Belarus Tel.: +375 29 117-99-79</p><p>jurkevich@bntu.by</p></bio><email xlink:type="simple">jurkevich@bntu.by</email><xref ref-type="aff" rid="aff-2"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Ахмедов</surname><given-names>А. П.</given-names></name><name name-style="western" xml:lang="en"><surname>Akhmedov</surname><given-names>A. P.</given-names></name></name-alternatives><bio xml:lang="ru"><p>г. Ташкент</p></bio><bio xml:lang="en"><p>Tashkent</p></bio><xref ref-type="aff" rid="aff-3"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Худойберганов</surname><given-names>C. Б.</given-names></name><name name-style="western" xml:lang="en"><surname>Khudoyberganov</surname><given-names>S. B.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Доктор философии по техническим наукам, доцент.</p><p>г. Ташкент</p></bio><bio xml:lang="en"><p>Tashkent</p></bio><xref ref-type="aff" rid="aff-3"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru"><institution>Научно-практический центр НАН Беларуси по материаловедению</institution><country>Беларусь</country></aff><aff xml:lang="en"><institution>Scientific and Practical Center for Materials Science of the National Academy of Sciences of Belarus</institution><country>Belarus</country></aff></aff-alternatives><aff-alternatives id="aff-2"><aff xml:lang="ru"><institution>Белорусский национальный технический университет</institution><country>Беларусь</country></aff><aff xml:lang="en"><institution>Belarusian National Technical University</institution><country>Belarus</country></aff></aff-alternatives><aff-alternatives id="aff-3"><aff xml:lang="ru"><institution>Ташкентский государственный транспортный университет</institution><country>Узбекистан</country></aff><aff xml:lang="en"><institution>Tashkent State Transport University</institution><country>Uzbekistan</country></aff></aff-alternatives><pub-date pub-type="collection"><year>2026</year></pub-date><pub-date pub-type="epub"><day>17</day><month>06</month><year>2026</year></pub-date><volume>25</volume><issue>3</issue><fpage>246</fpage><lpage>252</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Летко А.К., Савчук Г.К., Юркевич Н.П., Ахмедов А.П., Худойберганов C.Б., 2026</copyright-statement><copyright-year>2026</copyright-year><copyright-holder xml:lang="ru">Летко А.К., Савчук Г.К., Юркевич Н.П., Ахмедов А.П., Худойберганов C.Б.</copyright-holder><copyright-holder xml:lang="en">Letko A.K., Sauchuk G.K., Yurkevich N.P., Akhmedov A.P., Khudoyberganov S.B.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://sat.bntu.by/jour/article/view/2962">https://sat.bntu.by/jour/article/view/2962</self-uri><abstract><p>Получен частотный керамический материал с высокой температурной стабильностью резонансной частоты, что гарантирует устойчивую работу устройств на его основе при изменении температур. В статье представлены результаты влияния условий получения на микроструктуру и диэлектрические свойства, а также на микроволновые параметры керамики. Для получения материала использован метод твердофазного синтеза, который проводился при температуре 1000 °С и времени синтеза 2 ч с последующим термическим обжигом. Показано, что оптимальные микроволновые свойства керамики состава BaSm2Ti4O12 имеют при температурах спекания в интервале 1360–1380 °С. Установлено, что путем изменения температуры спекания значение диэлектрической проницаемости керамического материала можно увеличить почти в два раза. Экспериментально определены резонансные частоты керамик для различных температурных режимов спекания. Значения резонансных частот материалов варьируются от 6,7 до 8,9 ГГц. Получено, что добротность керамического материала вблизи резонансных частот существенно зависит от рабочих температур, при температурах выше 40 °С наблюдается снижение добротности керамического материала на 22–30 %. Путем изучения частотных зависимостей действительной и мнимой частей диэлектрической проницаемости исследуемых керамик установлены возможные механизмы поляризации. Показано, что резонансный характер дисперсии диэлектрической проницаемости характерен для интервала частот 100–900 МГц. На частотах гигагерцового интервала преобладает дипольная и миграционная поляризация. Полученные керамики благодаря своим свойствам в гигагерцовом диапазоне частот могут использоваться для изготовления подложек для микрополосковых антенн и СВЧ-схем, а также в качестве диэлектрических резонаторных антенн и компонентов систем спутниковой и мобильной связи.</p></abstract><trans-abstract xml:lang="en"><p>A frequency-dependent ceramic material with high temperature stability of the resonant frequency has been obtained, which guarantees stable operation of devices based on it when temperatures change. The article presents the results of the influence of the production conditions on the microstructure and dielectric properties, as well as on the microwave parameters of ceramics. The solid-phase synthesis method was used to obtain the material. The synthesis was carried out at a temperature of 1000 °C for 2 h with subsequent thermal firing. It is shown that the optimal microwave properties of BaSm2Ti4O12 ceramics are obtained at sintering temperatures in the range of 1360–1380 °C. It is established that by changing the sintering temperature, the dielectric permeability of the ceramic material can be increased almost twice. The resonant frequencies of ceramics for various sintering temperature regimes were determined experimentally. The resonant frequencies of the materials range from 6.7 to 8.9 GHz. It is found that the quality factor of the ceramic material near the resonant frequencies significantly depends on the operating temperatures. At operating temperatures above 40 °C, a decrease in the quality factor of the ceramic material by 22–30 % is observed. By studying the frequency dependencies of the real and imaginary parts of the dielectric permittivity of the ceramics under study, possible polarization mechanisms were established. It is shown that the resonant nature of the dielectric permittivity dispersion is characteristic of the 100–900 MHz frequency range. At gigahertz frequencies, dipole and migration polarization prevail. Due to their properties in the gigahertz frequency range, the ceramics obtained can be used for the manufacture of substrates for microstrip antennas and microwave circuits, as well as for dielectric resonator antennas and components of satellite and mobile communication systems.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>диэлектрические свойства</kwd><kwd>микроструктура</kwd><kwd>BaSm2Ti4O12</kwd><kwd>резонансная частота</kwd><kwd>микроволновые свойства</kwd><kwd>частотные зависимости</kwd><kwd>антенна</kwd><kwd>добротность</kwd><kwd>диэлектрическая проницаемость</kwd><kwd>поляризация</kwd></kwd-group><kwd-group xml:lang="en"><kwd>dielectric properties</kwd><kwd>microstructure</kwd><kwd>BaSm2Ti4O12</kwd><kwd>resonance frequency</kwd><kwd>microwave properties</kwd><kwd>frequency dependencies</kwd><kwd>antenna</kwd><kwd>quality factor</kwd><kwd>dielectric permittivity</kwd><kwd>polarization</kwd></kwd-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Электрически управляемые компоненты на основе керамики BST-Mg для применения в ускорительной технике / Е. 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